Host crystal info | |
---|---|
Host material | Ag2Cl2Se4 |
Layer group | p2_111 |
Layer group number | 9 |
Band gap (PBE) [eV] | 1.340 |
Band gap (HSE) [eV] | 2.421 |
Host unique ID (C2DB) | 2AgClSe2-1 |
Defect properties | |
---|---|
Defect-defect distance [Å] | 15.830 |
Point group | C1 |
Transition | Transition energy | Relaxation correction |
---|---|---|
v_Se (0/1) | -0.16 | -0.03 |
v_Se (1/2) | -0.07 | -0.02 |
v_Se (2/3) | 0.02 | 0.00 |
v_Se (0/-1) | 1.23 | -0.05 |
Defect formation energy | Value |
---|---|
v_Se (q = 0 @ VBM) | 0.47 |
v_Se (q = 1 @ VBM) | 0.60 |
v_Se (q = 2 @ VBM) | 0.65 |
v_Se (q = 3 @ VBM) | 0.63 |
v_Se (q = -1 @ VBM) | 1.65 |
Equilibrium properties @ 1000 K | Value |
---|---|
Intrinsic doping type | intrinsic |
Fermi level position | 0.52 eV |
Strength of p-/n-type dopability in percent | 62% / 38% |
Electron carrier concentration | 4.0e+09 cm-2 |
Hole carrier concentration | 1.3e+11 cm-2 |
Charge state | Eq. concentrations of AgCl [cm-2] |
---|---|
Charge 0 | 1.1e+01 |
Charge 1 | 9.0e+04 |
Charge 2 | 2.5e+09 |
Charge -1 | 4.5e-04 |
Charge -2 | 7.9e-04 |
Charge state | Eq. concentrations of AgSe [cm-2] |
---|---|
Charge 0 | 3.3e+10 |
Charge 1 | 6.0e+08 |
Charge -1 | 2.1e+07 |
Charge -2 | 3.6e+04 |
Charge -3 | 4.1e+01 |
Charge state | Eq. concentrations of ClAg [cm-2] |
---|---|
Charge 0 | 4.2e+07 |
Charge 1 | 1.3e+05 |
Charge -1 | 6.6e+09 |
Charge -2 | 7.8e+10 |
Charge state | Eq. concentrations of ClSe [cm-2] |
---|---|
Charge 0 | 1.1e+12 |
Charge 1 | 3.5e+10 |
Charge -1 | 1.1e+09 |
Charge -2 | 1.1e+06 |
Charge -3 | 1.2e+03 |
Charge state | Eq. concentrations of SeAg [cm-2] |
---|---|
Charge 0 | 6.5e+04 |
Charge 1 | 2.6e+04 |
Charge -1 | 1.3e+01 |
Charge -2 | 2.3e-01 |
Charge state | Eq. concentrations of SeCl [cm-2] |
---|---|
Charge 0 | 5.1e+04 |
Charge 1 | 1.2e+02 |
Charge -1 | 6.8e+00 |
Charge -2 | 9.3e-04 |
Charge -3 | 7.6e-08 |
Charge state | Eq. concentrations of VAg [cm-2] |
---|---|
Charge 0 | 6.9e+06 |
Charge 1 | 4.4e+03 |
Charge 2 | 5.8e+00 |
Charge -1 | 6.2e+09 |
Charge state | Eq. concentrations of VCl [cm-2] |
---|---|
Charge 0 | 3.9e+04 |
Charge 1 | 9.6e+08 |
Charge -1 | 4.2e+00 |
Charge -2 | 1.9e-03 |
Charge -3 | 4.0e-07 |
Charge state | Eq. concentrations of VSe [cm-2] |
---|---|
Charge 0 | 1.6e+11 |
Charge 1 | 8.4e+07 |
Charge 2 | 1.1e+05 |
Charge 3 | 3.2e+02 |
Charge -1 | 7.8e+07 |
Equilibrium properties @ 1000 K | Value |
---|---|
Intrinsic doping type | intrinsic |
Fermi level position | 0.51 eV |
Strength of p-/n-type dopability in percent | 63% / 37% |
Electron carrier concentration | 3.4e+09 cm-2 |
Hole carrier concentration | 1.6e+11 cm-2 |
Charge state | Eq. concentrations of AgCl [cm-2] |
---|---|
Charge 0 | 2.8e+00 |
Charge 1 | 2.7e+04 |
Charge 2 | 8.7e+08 |
Charge -1 | 9.7e-05 |
Charge -2 | 1.4e-04 |
Charge state | Eq. concentrations of AgSe [cm-2] |
---|---|
Charge 0 | 6.6e+10 |
Charge 1 | 1.4e+09 |
Charge -1 | 3.6e+07 |
Charge -2 | 5.2e+04 |
Charge -3 | 5.0e+01 |
Charge state | Eq. concentrations of ClAg [cm-2] |
---|---|
Charge 0 | 1.7e+08 |
Charge 1 | 6.1e+05 |
Charge -1 | 2.2e+10 |
Charge -2 | 2.2e+11 |
Charge state | Eq. concentrations of ClSe [cm-2] |
---|---|
Charge 0 | 8.5e+12 |
Charge 1 | 3.3e+11 |
Charge -1 | 7.1e+09 |
Charge -2 | 6.3e+06 |
Charge -3 | 5.7e+03 |
Charge state | Eq. concentrations of SeAg [cm-2] |
---|---|
Charge 0 | 3.3e+04 |
Charge 1 | 1.5e+04 |
Charge -1 | 5.7e+00 |
Charge -2 | 8.3e-02 |
Charge state | Eq. concentrations of SeCl [cm-2] |
---|---|
Charge 0 | 6.5e+03 |
Charge 1 | 1.8e+01 |
Charge -1 | 7.3e-01 |
Charge -2 | 8.5e-05 |
Charge -3 | 5.9e-09 |
Charge state | Eq. concentrations of VAg [cm-2] |
---|---|
Charge 0 | 6.9e+06 |
Charge 1 | 5.2e+03 |
Charge 2 | 8.0e+00 |
Charge -1 | 5.3e+09 |
Charge state | Eq. concentrations of VCl [cm-2] |
---|---|
Charge 0 | 9.8e+03 |
Charge 1 | 2.9e+08 |
Charge -1 | 8.9e-01 |
Charge -2 | 3.4e-04 |
Charge -3 | 6.3e-08 |
Charge state | Eq. concentrations of VSe [cm-2] |
---|---|
Charge 0 | 3.2e+11 |
Charge 1 | 2.0e+08 |
Charge 2 | 3.1e+05 |
Charge 3 | 1.0e+03 |
Charge -1 | 1.3e+08 |
Equilibrium properties @ 1000 K | Value |
---|---|
Intrinsic doping type | intrinsic |
Fermi level position | 0.46 eV |
Strength of p-/n-type dopability in percent | 67% / 33% |
Electron carrier concentration | 1.8e+09 cm-2 |
Hole carrier concentration | 2.9e+11 cm-2 |
Charge state | Eq. concentrations of AgCl [cm-2] |
---|---|
Charge 0 | 7.0e-01 |
Charge 1 | 1.2e+04 |
Charge 2 | 7.4e+08 |
Charge -1 | 1.3e-05 |
Charge -2 | 1.1e-05 |
Charge state | Eq. concentrations of AgSe [cm-2] |
---|---|
Charge 0 | 8.3e+09 |
Charge 1 | 3.3e+08 |
Charge -1 | 2.5e+06 |
Charge -2 | 2.0e+03 |
Charge -3 | 1.0e+00 |
Charge state | Eq. concentrations of ClAg [cm-2] |
---|---|
Charge 0 | 6.6e+08 |
Charge 1 | 4.4e+06 |
Charge -1 | 4.8e+10 |
Charge -2 | 2.6e+11 |
Charge state | Eq. concentrations of ClSe [cm-2] |
---|---|
Charge 0 | 4.3e+12 |
Charge 1 | 3.0e+11 |
Charge -1 | 2.0e+09 |
Charge -2 | 9.4e+05 |
Charge -3 | 4.6e+02 |
Charge state | Eq. concentrations of SeAg [cm-2] |
---|---|
Charge 0 | 2.6e+05 |
Charge 1 | 2.2e+05 |
Charge -1 | 2.5e+01 |
Charge -2 | 1.9e-01 |
Charge state | Eq. concentrations of SeCl [cm-2] |
---|---|
Charge 0 | 1.3e+04 |
Charge 1 | 6.8e+01 |
Charge -1 | 7.9e-01 |
Charge -2 | 5.0e-05 |
Charge -3 | 1.9e-09 |
Charge state | Eq. concentrations of VAg [cm-2] |
---|---|
Charge 0 | 2.7e+07 |
Charge 1 | 3.8e+04 |
Charge 2 | 1.1e+02 |
Charge -1 | 1.1e+10 |
Charge state | Eq. concentrations of VCl [cm-2] |
---|---|
Charge 0 | 9.8e+03 |
Charge 1 | 5.3e+08 |
Charge -1 | 4.9e-01 |
Charge -2 | 1.0e-04 |
Charge -3 | 1.0e-08 |
Charge state | Eq. concentrations of VSe [cm-2] |
---|---|
Charge 0 | 1.6e+11 |
Charge 1 | 1.8e+08 |
Charge 2 | 5.2e+05 |
Charge 3 | 3.2e+03 |
Charge -1 | 3.6e+07 |